PART |
Description |
Maker |
K7I643682M07 K7I641882M |
2Mx36 & 4Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
GS8662S36GE-250I |
72Mb Burst of 2 DDR SigmaSIO-II SRAM 2M X 36 DDR SRAM, 0.45 ns, PBGA165
|
GSI Technology, Inc.
|
GS8662T18GE-267 |
72Mb SigmaCIO DDR-II Burst of 2 SRAM 4M X 18 DDR SRAM, 0.45 ns, PBGA165
|
GSI Technology, Inc.
|
GS8662S09E-167I |
72Mb Burst of 2 DDR SigmaSIO-II SRAM 8M X 9 DDR SRAM, 0.5 ns, PBGA165
|
GSI Technology, Inc.
|
K7I643684M-EI25 K7I643684M-EI30 K7I641884M-CI30 K7 |
72Mb DDRII SRAM Specification 72Mb SRAM的规范条DDRII
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
GS8662DT19BD-300 GS8662DT19BD-333 GS8662DT19BD-400 |
72Mb SigmaQuad-II TM Burst of 4 SRAM JEDEC-standard pinout and package Dual Double Data Rate interface 72Mb SigmaQuad-II TMBurst of 4 SRAM
|
GSI Technology
|
EM6A9320 EM6A9320BI-28 EM6A9320BI-30 EM6A9320BI-33 |
285MHz 2.8V 4M x 32 DDR SDRAM 300MHz 2.8V 4M x 32 DDR SDRAM 333MHz 2.8V 4M x 32 DDR SDRAM 350MHz 2.8V 4M x 32 DDR SDRAM 4M x 32 DDR SDRAM 4米32 DDR SDRAM内存
|
ETRON[Etron Technology, Inc.] Etron Technology Inc. ETRON[Etron Technology Inc.]
|
KMM5362203C2W |
2Mx36 DRAM Simm Using 1Mx16 And 1Mx4 Quad Cas
|
Samsung Semiconductor
|
HY5DU56422DTP HY5DU56822DTP HY5DU56822DTP-J HY5DU5 |
256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM) 32M X 8 DDR DRAM, 0.75 ns, PDSO66
|
Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
HY5DU56822AF HY5DU56422AF-J HY5DU561622AF HY5DU564 |
32M X 8 DDR DRAM, 0.7 ns, PBGA60 DDR SDRAM - 256Mb 64Mx4|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M 16Mx16|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M
|
HYNIX SEMICONDUCTOR INC
|
GS864118 GS864132 GS864136 |
72Mb Burst SRAMs
|
GSI Technology
|